Just yesterday we took a look at Crossbar’s new technology to improve mobile memory storage, but Samsung has already moved into mass production of its new technology, which the company calls V-NAND flash.
After nearly 10 years of research, Samsung has managed to bypass the problems with scaling up traditional NAND flash chips by moving into the 3D realm. Rather than simply putting memory cells on a single 2D plane, the company has supped up its Charge Trap technology to build cell structures in 3D, aka vertical NAND (V-NAND).
So whilst Samsung’s new flash memory is just a sequential improvement on the existing setup, it does offer a couple of benefits over existing technologies. Firstly, Samsung states that its new memory chips will be at least twice as reliable as its older versions, possibly offering up to 10 times the reliability, but this will probably vary depending on the side of the memory chip.
These V-NAND flash chips will offer Samsung’s 128-gigabit (16GB) capacity, which is currently the densest flash memory on the market. What this means is that Samsung can build denser memory chips than ever before, thanks to the vertical plain, increasing the storage capacity of memory cards and solid state hard drives without taking up much more space or limiting reliability.
Samsung currently hasn’t specified when its new technology will hit the market, so we’ll have to wait and see which device will be the first to ship with this new storage solution.
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